| Part Number: | RN1101ACT |
| Product Name: | RN1101ACT Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Merchant-Specific Identifier: | RN1101ACT |
| Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Brand: | Toshiba Semiconductor and Storage |
| Description: | TRANS PREBIAS NPN 0.1W CST3 |
| Series: | - |
| Packaging: | |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 80mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1) (Ohms): | 4.7k |
| Resistor - Emitter Base (R2) (Ohms): | 4.7k |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Frequency - Transition: | - |
| Power - Max: | 100mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
Part Number
Brand
D/C
Qty
RN1101ACT TOSHIBA/
TOSHIBA/
30000
USD 0
RN1101ACT TOSHIBA/
TOSHIBA/
31000
USD 0
RN1101ACT TOSHIBA/ 2022
TOSHIBA/
2022
31000
USD 0
RN1101ACT TOSHIBA 12+
TOSHIBA
12+
20000
USD 0
RN1101ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
RN1101ACT TOSHIBA/
TOSHIBA/
30000
USD 0
RN1101ACT TOSHIBA/
TOSHIBA/
31000
USD 0
RN1101ACT TOSHIBA/ 2022
TOSHIBA/
2022
31000
USD 0
RN1101ACT TOSHIBA 12+
TOSHIBA
12+
20000
USD 0
RN1101ACT(TPL3) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
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