| Part Number: | IPB06CN10N |
| Product Name: | IPB06CN10N Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | IPB06CN10N |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 100V 100A TO263-3 |
| Series: | OptiMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 4V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 9200pF @ 50V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | 214W (Tc) |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 100A, 10V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TO263-2 |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Part Number
Brand
D/C
Qty
IPB06CN10N G INFINEON 22+
INFINEON
22+
32000
USD 0
IPB06CN10N G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IPB06CN10N Infineon
Infineon
85
USD 0
IPB06CN10N G INFINEON
INFINEON
22800
USD 0
IPB06CN10N G INFINEON 22+
INFINEON
22+
32000
USD 0
IPB06CN10N G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IPB06CN10N Infineon
Infineon
85
USD 0
IPB06CN10N G INFINEON
INFINEON
22800
USD 0
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