Part Number: | HN4B01JE |
Product Name: | HN4B01JE Transistors - Bipolar (BJT) - Arrays |
Merchant-Specific Identifier: | HN4B01JE |
Category: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays |
Brand: | Toshiba Semiconductor and Storage |
Description: | TRANS NPN/PNP 50V 0.15A ESV PLN |
Series: | - |
Packaging: | Cut Tape (CT) |
Transistor Type: | NPN, PNP (Emitter Coupled) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10MA, 100MA |
Power - Max: | 100mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-553 |
Supplier Device Package: | ESV |
Part Number
Brand
D/C
Qty
HN4B01JE(TE85LF) TOSHIBA 2012
TOSHIBA
2012
3370
USD 0
HN4B01JE toshiba 2022+
toshiba
2022+
31595
USD 0
HN4B01JE(TE85L,F) TRANS NPN/PNP 50V 0.15A ESV PLN 22+
TRANS NPN/PNP 50V 0.15A ESV PLN
22+
5888
USD 0
HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0
HN4B01JE(TE85LF) TOSHIBA 2012
TOSHIBA
2012
3370
USD 0
HN4B01JE toshiba 2022+
toshiba
2022+
31595
USD 0
HN4B01JE(TE85L,F) TRANS NPN/PNP 50V 0.15A ESV PLN 22+
TRANS NPN/PNP 50V 0.15A ESV PLN
22+
5888
USD 0
HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
8000
USD 0
HN4B01JE(TE85L,F) Toshiba Semiconductor and Storage 23+
Toshiba Semiconductor and Storage
23+
16660
USD 0